The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Dec. 23, 2021
Intel Corporation, Santa Clara, CA (US);
Cory C. Bomberger, Portland, OR (US);
Nicholas Minutillo, Beaverton, OR (US);
Ryan Cory Haislmaier, Albuquerque, NM (US);
Yulia Tolstova, Hillsboro, OR (US);
Yoon Jung Chang, Hillsboro, OR (US);
Tahir Ghani, Portland, OR (US);
Szuya S. Liao, Zhubei City, TW;
Anand Murthy, Portland, OR (US);
Pratik Patel, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An integrated circuit (IC) structure, an IC device, an IC device assembly, and a method of forming the same. The IC structure includes a transistor device on a substrate comprising: a gate structure including a metal, the gate structure on a channel structure; a source structure in a first trench at a first side of the gate structure; a drain structure in a second trench at a second side of the gate structure; a capping layer on individual ones of the source structure and of the drain structure. The capping layer comprising a semiconductor material of a same group as a semiconductor material of a corresponding one of the source structure or of the drain structure, wherein an isotope of a p-type dopant in the capping layer represents an atomic percentage of at least about 95% of a p-type isotope content of the capping layer; and metal contact structures coupled to respective ones of the source structure and of the drain structure.