Hillsboro, OR, United States of America

Yoon Jung Chang

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Corporation. Active years: 2026.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yoon Jung Chang: Innovator in Integrated Circuit Technology

Introduction

Yoon Jung Chang is a notable inventor based in Hillsboro, Oregon. He has made significant contributions to the field of integrated circuit technology. His work focuses on improving the performance and efficiency of transistors.

Latest Patents

Yoon Jung Chang holds a patent for "Transistors with doped intrinsic germanium caps on source drain regions for improved contact resistance." This patent describes an integrated circuit (IC) structure that includes a transistor device on a substrate. The IC structure features a gate structure made of metal, positioned on a channel structure. It also includes a source structure in a trench at one side of the gate and a drain structure in a trench at the opposite side. A capping layer made of semiconductor material enhances the contact resistance, ensuring improved performance of the device.

Career Highlights

Yoon Jung Chang is currently employed at Intel Corporation, a leading technology company known for its innovations in semiconductor manufacturing. His work at Intel has allowed him to contribute to cutting-edge technologies in the field of electronics.

Collaborations

Yoon has collaborated with Cory C Bomberger, working together to advance their research and development efforts in integrated circuits.

Conclusion

Yoon Jung Chang's contributions to integrated circuit technology and his innovative patent demonstrate his commitment to enhancing electronic devices. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
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