Average Co-Inventor Count = 4.84
ph-index = 30
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Intel Corporation (331 from 54,445 patents)
2. Daedalus Prime LLC (5 from 9 patents)
3. Sony Group Corporation (3 from 3,303 patents)
4. Tahoe Research, Ltd. (2 from 81 patents)
5. Sony Corporation (1 from 58,123 patents)
6. Intel Coporation (1 from 1 patent)
343 patents:
1. 12451420 - Staircase-based metal-insulator-metal (MIM) capacitors
2. 12439669 - Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts
3. 12439640 - Reduced contact resistivity with PMOS germanium and silicon doped with boron gate all around transistors
4. 12432964 - Co-integrated gallium nitride (GaN) and complementary metal oxide semiconductor (CMOS) integrated circuit technology
5. 12426342 - Low germanium, high boron silicon rich capping layer for PMOS contact resistance thermal stability
6. 12419091 - Source electrode and drain electrode protection for nanowire transistors
7. 12414366 - Co-integration of high voltage (HV) and low voltage (LV) transistor structures, using channel height and spacing modulation
8. 12402387 - Integrated circuit structures including a titanium silicide material
9. 12388011 - Top gate recessed channel CMOS thin film transistor and methods of fabrication
10. 12363967 - Integration methods to fabricate internal spacers for nanowire devices
11. 12349420 - Device, method and system to provide a stressed channel of a transistor
12. 12342574 - Contact resistance reduction in transistor devices with metallization on both sides
13. 12342611 - Source or drain structures with vertical trenches
14. 12328927 - Low resistance and reduced reactivity approaches for fabricating contacts and the resulting structures
15. 12328920 - Nanoribbon sub-fin isolation by backside Si substrate removal etch selective to source and drain epitaxy