The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Dec. 15, 2021
Intel Corporation, Santa Clara, CA (US);
Anand Murthy, Portland, OR (US);
Prashant Majhi, San Jose, CA (US);
Prahalad Parthangal, Beaverton, OR (US);
INTEL CORPORATION, Santa Clara, CA (US);
Abstract
An integrated circuit structure includes a first layer comprising silicon and at least one of carbon, oxygen, or hydrogen, and a device layer including a plurality of transistors above the first layer. A first interconnect structure is above the device layer and includes first conductive interconnect features. A second interconnect structure is below the first layer and includes second conductive interconnect features. In an example, one or more of the second conductive interconnect features pass through a bottom surface of the first layer. One or more third conductive interconnect features vertically extend through the device layer to a top surface of the first layer. In an example, the one or more third conductive interconnect features are in contact with the corresponding one or more of the second conductive interconnect features that pass through the bottom surface of the first layer.