The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Jul. 01, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Abhishek Anil Sharma, Portland, OR (US);

Sagar Suthram, Portland, OR (US);

Wilfred Gomes, Portland, OR (US);

Anand Murthy, Portland, OR (US);

Tahir Ghani, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/00 (2023.02);
Abstract

Bits are stored in cells having two transistors between two parallel bitlines. In a memory array, first and second transistor channels in a bit cell are parallel and offset and coupled to first and second bitlines, respectively, which are also parallel and offset. Adjacent bit cells share corresponding transistor channel structures. The transistor channels may be orthogonal to the bitlines. The memory array may be on an integrated circuit (IC) die, which may be coupled to a power supply in an IC system. In an IC system, the memory array may be coupled to a power supply and a cooling structure.


Find Patent Forward Citations

Sharma, Abhishek. (2026). Scaled gain cell enhanced at low temperatures (U.S. Patent No. 12777629). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777629

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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