Portland, OR, United States of America

Abhishek Anil Sharma

This inventor holds 40 USPTO granted patents and 23 published patent applications and 2 EPO patents, primarily in Transistor Technology. Top assignee: Intel Corporation. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Abhishek Anil Sharma. Retrieved from https://idiyas.com/inventor/abhishek-anil-sharma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 95.0

 

Average Co-Inventor Count = 4.6

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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Areas of Expertise:
Transistor Devices
Memory Arrays
Integrated Circuits
Thermoelectric Devices
Silicon Carbide
Thin Film Transistors
Dynamic RAM
Static RAM
Embedded Memory
Multi-Tier Structures
Capacitor Technology
Interconnect Structures
40 patents (USPTO):Explore Patents

Title: Abhishek Anil Sharma: Innovator in Integrated Circuit Technology

Introduction

Abhishek Anil Sharma is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of integrated circuit technology, holding 40 patents that showcase his innovative approach to memory cell design.

Latest Patents

One of his latest patents is titled "Punch-through interconnect feature to couple upper electrodes of capacitors of multi-level memory arrays." This patent describes an integrated circuit (IC) that includes a first memory cell and a second memory cell. The first memory cell consists of a first transistor and a first capacitor, where the upper electrode of the first capacitor is coupled to a first conductive structure. The second memory cell, positioned above the first, includes a second transistor and a second capacitor, with its upper electrode coupled to a second conductive structure. The interconnect feature in this design includes a continuous and monolithic body of conductive material that extends through both conductive structures. This innovation is particularly relevant for dynamic random access memory (DRAM) memory cells.

Another significant patent by Sharma is focused on "Integrated circuit structures having ultra-high conductivity global routing." This patent outlines structures that incorporate ultra-high conductivity global routing within an integrated circuit. The design features a device layer with multiple transistors and several metallization layers above them. Notably, one or more of these metal layers includes a material with a critical temperature greater than 10 Kelvin and less than 300 Kelvin, enhancing the performance of the integrated circuit.

Career Highlights

Abhishek Anil Sharma is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing. His work at Intel has positioned him as a key player in the development of cutting-edge integrated circuit technologies.

Collaborations

Throughout his career, Sharma has collaborated with talented professionals, including Tahir Ghani and Anand S Murthy. These collaborations have contributed to the innovative projects he has undertaken in the field of integrated circuits.

Conclusion

Abhishek Anil Sharma is a distinguished inventor whose work in integrated circuit technology has led to significant advancements in memory cell design. His contributions continue to influence the field and demonstrate the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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