The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Apr. 01, 2022
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Abhishek Anil Sharma, Portland, OR (US);
Wilfred Gomes, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 40/28 (2026.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10W 40/00 (2026.01); H10N 19/00 (2023.01);
U.S. Cl.
CPC ...
H10W 40/28 (2026.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01); H10W 40/037 (2026.01); H10N 19/00 (2023.02);
Abstract
Thermoelectric (TE) devices and their manufacture on integrated circuit (IC) dies to improve thermal performance. An IC die may include a substrate with transistors on one side, a heat spreader on a second side, and a TE device between them. The TE device may have TE elements with similar dimensions as transistor features. An IC die with transistor circuitry blocks in multiple areas of an IC die may include TE devices between each of the transistor circuitry blocks and a heat spreader.