logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12765002 B1

PDFFull Text
Date of Patent:
Oct. 13, 2026

Filed:

Dec. 29, 2022

Integrated circuit structures having vertical shared gate high-drive thin film transistors

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Abhishek Anil Sharma, Portland, OR (US);

Sagar Suthram, Portland, OR (US);

Wilfred Gomes, Portland, OR (US);

Tahir Ghani, Portland, OR (US);

Anand S. Murthy, Portland, OR (US);

Pushkar Ranade, San Jose, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Schwabe, Williamson & Wyatt, P.C.

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 23/48 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/83 (2025.01); H10W 20/20 (2026.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10D 62/121 (2025.01); H10D 84/834 (2025.01); H10W 20/20 (2026.01);
Abstract

Structures having vertical shared gate high-drive thin film transistors are described. In an example, an integrated circuit structure includes a stack of alternating dielectric layers and metal layers. A trench is through the stack of alternating dielectric layers and metal layers. A semiconductor channel layer is along sides of the trench. A gate dielectric layer is along sides the semiconductor channel layer in the trench. A gate electrode is within sides of the gate dielectric layer.

Find Patent Forward Citations

Sharma, Abhishek. (2026). Integrated circuit structures having vertical shared gate high-drive thin film transistors (U.S. Patent No. 12765002). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765002

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…