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Hillsboro, OR, United States of America

Pushkar Ranade

USPTO Granted Patents = 19 (Patent Applications = 81)

EPO Patents = 1 (Patent Applications = 7)

Average Co-Inventor Count = 2.1

ph-index = 4

Forward Citations = 252(Granted Patents)

Location History:

Hillsboro, OR (US) (2006 - 2016)
San Jose, CA (US) (2016 - 2017)

Company Filing History:

16 out of 54,750

Intel Corporation

2 out of 164,197

International Business Machines Corporation

1 out of 832,843

Other

patents

Years Active: 2006-2025

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19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12506128 - Package architecture of scalable compute wall having compute bricks with vertically stacked dies (2025-12-23),

2. 12506127 - Package architecture of photonic system with vertically stacked dies having planarized edges (2025-12-23),

3. 12498876 - Performing distributed processing using distributed memory (2025-12-16),

4. 12488832 - Embedded dynamic random-access memory (eDRAM) to operate based on data access characteristics (2025-12-02),

5. 12471362 - Integrated circuit structures having ultra-high conductivity global routing (2025-11-11),

6. 12436711 - Providing fine grain access to package memory (2025-10-07),

7. 9847420 - Active regions with compatible dielectric layers (2017-12-19),

8. 9646822 - Active regions with compatible dielectric layers (2017-05-09),

9. 9515142 - Active regions with compatible dielectric layers (2016-12-06),

10. 9397165 - Active regions with compatible dielectric layers (2016-07-19),

11. 9287364 - Active regions with compatible dielectric layers (2016-03-15),

12. 8394687 - Ultra-abrupt semiconductor junction profile (2013-03-12),

13. 7861406 - Method of forming CMOS transistors with dual-metal silicide formed through the contact openings (2011-01-04),

14. 7750471 - Metal and alloy silicides on a single silicon wafer (2010-07-06),

15. 7691752 - Methods of forming improved EPI fill on narrow isolation bounded source/drain regions and structures formed thereby (2010-04-06),

Title: Pushkar Ranade: Pioneering Inventor from Hillsboro

Introduction: Pushkar Ranade is a distinguished inventor based in Hillsboro, Oregon, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Pushkar Ranade holds several patents in the areas of semiconductor technology, artificial intelligence, and renewable energy solutions, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Pushkar Ranade has worked with leading tech companies, research institutions, and universities, playing a key role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Pushkar Ranade has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and knowledge exchange that has led to the development of impactful inventions.

Conclusion: Pushkar Ranade's passion for innovation, coupled with his relentless pursuit of excellence, continues to inspire the next generation of inventors and technologists, making him a true pioneer in the world of technology.

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