The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2026

Filed:

Sep. 30, 2022
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Abhishek Anil Sharma, Portland, OR (US);

Pushkar Ranade, San Jose, CA (US);

Sagar Suthram, Portland, OR (US);

Wilfred Gomes, Portland, OR (US);

Tahir Ghani, Portland, OR (US);

Anand S. Murthy, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/44 (2026.01); H10W 20/41 (2026.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10W 20/4403 (2026.01); H10W 20/435 (2026.01); H10D 62/121 (2025.01);
Abstract

Embodiments disclosed herein include an integrated circuit structure. In an embodiment, the integrated circuit structure comprises an interlayer dielectric (ILD), and an opening in the ILD. In an embodiment, a first layer lines the opening, and a second layer lines the first layer. In an embodiment, the second layer comprises a semi-metal or transition metal dichalcogenide (TMD). The integrated circuit structure may further comprise a third layer over the second layer.


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