The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2011
Filed:
Mar. 26, 2008
Wesley C. Natzle, New Paltz, NY (US);
Renee T. MO, Briarcliff Manor, NY (US);
Rashmi Jha, Wappingers Falls, NY (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Richard A. Conti, Katonah, NY (US);
Wesley C. Natzle, New Paltz, NY (US);
Renee T. Mo, Briarcliff Manor, NY (US);
Rashmi Jha, Wappingers Falls, NY (US);
Kathryn T. Schonenberg, Wappingers Falls, NY (US);
Richard A. Conti, Katonah, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
In one embodiment, the present invention provides a method of fabricating a semiconducting device that includes providing a substrate including at least one semiconducting region and at least one oxygen source region; forming an oxygen barrier material atop portions of an upper surface of the at least one oxygen region; forming a high-k gate dielectric on the substrate including the at least one semiconducting region, wherein oxygen barrier material separates the high-k gate dielectric from the at least one oxygen source material; and forming a gate conductor atop the high-k gate dielectric.