IDiyas

For the Inventor, By the Inventor

Katonah, NY, United States of America

Richard Anthony Conti

USPTO Granted Patents = 73 

Average Co-Inventor Count = 4.8

ph-index = 17

Forward Citations = 3,112(Granted Patents)

DiyaCoin DiyaCoin = 2.74 


Inventors with similar research interests:


Location History:

  • Westchester County, NY (US) (1996 - 1998)
  • Kisco, NY (US) (2000)
  • Mount Cisco, NY (US) (2000)
  • Mount Kisco, NY (US) (1992 - 2004)
  • Mt. Kisco, NY (US) (1995 - 2005)
  • Katohah, NY (US) (2009)
  • Katonah, NY (US) (2003 - 2019)
  • Katonach, NY (US) (2010 - 2021)
  • Altamont, NY (US) (2020 - 2023)

Company Filing History:

goldMedal66 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal3 out of 993 
 
Novellus Systems Incorporated
 patents
bronzeMedal2 out of 10,295 
 
Tokyo Electron Limited
 patents
4. 1 out of 13,684 
 
Applied Materials, Inc.
 patents
5. 1 out of 665 
 
Morton International, Inc.
 patents
6. 1 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
7. 5 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1992-2025

where 'Filed Patents' based on already Granted Patents

73 patents (USPTO):
1. 12402391 - Stressed material within gate cut region (2025-08-26),
2. 11791398 - Nano multilayer carbon-rich low-k spacer (2023-10-17),
3. 11322408 - Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer (2022-05-03),
4. 11189532 - Dual width finned semiconductor structure (2021-11-30),
5. 11164958 - Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions (2021-11-02),
6. 11114382 - Middle-of-line interconnect having low metal-to-metal interface resistance (2021-09-07),
7. 11056537 - Self-aligned gate contact integration with metal resistor (2021-07-06),
8. 10937892 - Nano multilayer carbon-rich low-k spacer (2021-03-02),
9. 10910273 - Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layer (2021-02-02),
10. 10832973 - Stress modulation of nFET and pFET fin structures (2020-11-10),
11. 10734245 - Highly selective dry etch process for vertical FET STI recess (2020-08-04),
12. 10672668 - Dual width finned semiconductor structure (2020-06-02),
13. 10665512 - Stress modulation of nFET and pFET fin structures (2020-05-26),
14. 10586733 - Multi-level air gap formation in dual-damascene structure (2020-03-10),
15. 10586700 - Protection of low temperature isolation fill (2020-03-10),

Title: Unveiling the Genius of Inventor Richard Anthony Conti

Introduction:

Meet the prolific inventor, Richard Anthony Conti, hailing from Katonah, NY (US), known for his groundbreaking contributions to the world of semiconductor devices. With an impressive portfolio of 72 patents, Conti has undoubtedly left an indelible mark on the realm of technological innovations.

Latest Patents:

Among Conti's latest patents is the "Nano Multilayer Carbon-Rich Low-k Spacer," a method revolutionizing the fabrication of semiconductor devices by enhancing the density of spacer layers. Additionally, his invention of the "Forming Shallow Trench Isolation Regions" showcases his prowess in developing cutting-edge semiconductor structures for nanosheet field-effect transistor devices.

Career Highlights:

Throughout his illustrious career, Richard Anthony Conti has made significant strides in the field of semiconductor technology. Having worked with esteemed organizations such as IBM, he has honed his expertise in driving innovation and spearheading advancements in the semiconductor industry.

Collaborations:

Collaboration lies at the heart of Conti's success, with notable coworkers including Jonathan Daniel Chapple-Sokol and Son Van Nguyen. Together, they have shared their passion for innovation, leading to the development of groundbreaking technologies that have redefined the semiconductor landscape.

Conclusion:

In conclusion, Richard Anthony Conti stands as a beacon of innovation in the realm of semiconductor devices. His relentless pursuit of excellence, combined with his collaborative spirit, has propelled him to the forefront of technological advancements. With each patent, Conti continues to shape the future of semiconductor technology, leaving a lasting legacy for generations to come.

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