Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regions

Abstract

Provided are embodiments of a method for forming a semiconductor device. The method includes forming a nanosheet stack on a substrate, wherein the nanosheet stack comprises channel layers and nanosheet layers, forming a sacrificial gate over the nanosheet stack, and forming trenches to expose sidewalls of the nanosheet stack. The method also includes forming source/drain (S/D) regions, where forming the S/D regions including forming first portions of the S/D regions on portions of the nano sheet stack, forming second portions of the S/D regions, wherein the first portions are different than the second portions, and replacing the sacrificial gate with a conductive gate material. Also provided are embodiments of a semiconductor device formed by the method described herein.