The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2020
Filed:
Nov. 16, 2017
International Business Machines Corporation, Armonk, NY (US);
Michael P. Belyansky, Halfmoon, NY (US);
Richard A. Conti, Katonach, NY (US);
Dechao Guo, Niskayuna, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Jay W. Strane, Warwick, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A semiconductor structure includes a plurality of semiconductor fins on an upper surface of a semiconductor substrate. The semiconductor fins spaced apart from one another by a respective trench to define a fin pitch. A multi-layer electrical isolation region is contained in each trench. The multi-layer electrical isolation region includes an oxide layer and a protective layer. The oxide layer includes a first material on an upper surface of the semiconductor substrate. The protective layer includes a second material on an upper surface of the oxide layer. The second material is different than the first material. The first material has a first etch resistance and the second material has a second etch resistance that is greater than the first etch resistance.