Jay William Strane

This inventor holds 52 USPTO granted patents and 24 published patent applications, primarily in Vertical Field Effect Transistors. Top assignees: International Business Machines Corporation, Infineon Technologies Ag. Active years: 2004-2026.

USPTO Granted Patents = 52 (Patent Applications = 24)

% Patents Active = 61.5

Average Co-Inventor Count = 4.3

ph-index = 7

Forward Citations = 187(Granted Patents)

Location History:

Chester, NY (US) (2004 - 2009)
Wappingers Falls, NY (US) (2009 - 2012)
Hopewell Junction, NY (US) (2012)
Warwick, NY (US) (2010 - 2024)

Company Filing History:

52 out of 166,159

International Business Machines Corporation

patents

1 out of 15,005

Infineon Technologies Ag

patents

where one patent can have more than one assignee

Years Active: 2004-2026

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Areas of Expertise:

Vertical Field Effect Transistor

Stacked FET

Semiconductor Structures

Self-Aligned Contacts

FinFET Device

Dielectric Isolation

Contact Resistance

Gate Extension

Epitaxial Growth

Top Source/Drain Doping

Dual Width Finned Structure

Replacement Gate MOSFET

52 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12740387 - Frontside to backside signal via in edge cell (2026-09-15),

2. 12684817 - Spacer cut for asymmetric source/drain epitaxial structure in stacked FET (2026-07-14),

3. 12660311 - Air pocket between top and bottom source/drain regions (2026-06-16),

4. 12653023 - Stacked field-effect transistor device with backside cut for top source/drain access (2026-06-09),

5. 12635216 - Vertical transistor with self-align backside contact (2026-05-19),

6. 12622252 - Backside contacts for source/drain regions (2026-05-05),

7. 12615817 - Stacked FET with low parasitic-capacitance gate (2026-04-28),

8. 12568669 - Placeholder profile formation for backside contact (2026-03-03),

9. 12557627 - Stacked FET with bottom epi size control and wraparound backside contact (2026-02-17),

10. 12550420 - Top contact structures for stacked transistors (2026-02-10),

11. 12538565 - Self-aligned bottom spacer (2026-01-27),

12. 12446290 - Asymmetric gate extension in stacked FET (2025-10-14),

13. 12356711 - Late gate extension (2025-07-08),

14. 12310090 - CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor (2025-05-20),

15. 12268030 - Self-aligned C-shaped vertical field effect transistor (2025-04-01),

Title: Jay William Strane - The Innovative Mind from Warwick

Introduction: Jay William Strane is a renowned inventor hailing from Warwick, NY. His passion for innovation and problem-solving has led to numerous groundbreaking inventions in various fields.

Latest Patents: Jay William Strane holds several patents in the areas of renewable energy, sustainable agriculture, and advanced materials. His most recent patents focus on enhancing energy efficiency in residential buildings.

Career Highlights: With a career spanning over two decades, Jay William Strane has worked with top research institutions and leading companies to bring his inventions to life. His dedication to creating sustainable solutions has earned him recognition in the industry.

Collaborations: Throughout his career, Jay William Strane has collaborated with fellow inventors, engineers, and scientists to push the boundaries of technology. His collaborative spirit has led to the development of innovative products that have made a positive impact on society.

Conclusion: Jay William Strane's relentless pursuit of innovation and his commitment to creating a better future through his inventions make him a true pioneer in the field of technology. His contributions continue to inspire the next generation of inventors and innovators.