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For the Inventor, By the Inventor

Warwick, NY, United States of America

Jay William Strane

USPTO Granted Patents = 41 

Average Co-Inventor Count = 4.1

ph-index = 7

Forward Citations = 183(Granted Patents)


Location History:

  • Chester, NY (US) (2004 - 2009)
  • Wappingers Falls, NY (US) (2009 - 2012)
  • Hopewell Junction, NY (US) (2012)
  • Warwick, NY (US) (2010 - 2024)

Company Filing History:

goldMedal41 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal1 out of 14,724 
 
Infineon Technologies Ag
 patents
where one patent can have more than one assignee

Years Active: 2004-2025

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Areas of Expertise:
Asymmetric Gate Extension
Vertical Field Effect Transistor
Stacked Field-Effect Transistors
FinFET Device
Self-Aligned Contacts
Dielectric Isolation
Semiconductor Structures
High Performance Gates
Trench Formation
Air Gap Interconnects
Epitaxial Growth
Contact Resistance
41 patents (USPTO):Explore Patents
1. 12446290 - Asymmetric gate extension in stacked FET (2025-10-14),
2. 12356711 - Late gate extension (2025-07-08),
3. 12310090 - CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor (2025-05-20),
4. 12268030 - Self-aligned C-shaped vertical field effect transistor (2025-04-01),
5. 12183740 - Stacked field-effect transistors (2024-12-31),
6. 11973125 - Self-aligned uniform bottom spacers for VTFETS (2024-04-30),
7. 11646373 - Vertical field effect transistor with bottom spacer (2023-05-09),
8. 11615990 - CMOS top source/drain region doping and epitaxial growth for a vertical field effect transistor (2023-03-28),
9. 11251287 - Self-aligned uniform bottom spacers for VTFETS (2022-02-15),
10. 11239119 - Replacement bottom spacer for vertical transport field effect transistors (2022-02-01),
11. 11217692 - Vertical field effect transistor with bottom spacer (2022-01-04),
12. 11189532 - Dual width finned semiconductor structure (2021-11-30),
13. 11043429 - Semiconductor fins with dielectric isolation at fin bottom (2021-06-22),
14. 10892193 - Controlling active fin height of FinFET device (2021-01-12),
15. 10770361 - Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removal (2020-09-08),

Title: Jay William Strane - The Innovative Mind from Warwick

Introduction: Jay William Strane is a renowned inventor hailing from Warwick, NY. His passion for innovation and problem-solving has led to numerous groundbreaking inventions in various fields.

Latest Patents: Jay William Strane holds several patents in the areas of renewable energy, sustainable agriculture, and advanced materials. His most recent patents focus on enhancing energy efficiency in residential buildings.

Career Highlights: With a career spanning over two decades, Jay William Strane has worked with top research institutions and leading companies to bring his inventions to life. His dedication to creating sustainable solutions has earned him recognition in the industry.

Collaborations: Throughout his career, Jay William Strane has collaborated with fellow inventors, engineers, and scientists to push the boundaries of technology. His collaborative spirit has led to the development of innovative products that have made a positive impact on society.

Conclusion: Jay William Strane's relentless pursuit of innovation and his commitment to creating a better future through his inventions make him a true pioneer in the field of technology. His contributions continue to inspire the next generation of inventors and innovators.

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