The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2026

Filed:

Nov. 17, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Debarghya Sarkar, Latham, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Albert M. Chu, Nashua, NH (US);

Brent A. Anderson, Jericho, VT (US);

Junli Wang, Slingerlands, NY (US);

Jay William Strane, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10W 20/41 (2026.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01); H10D 88/00 (2026.01);
U.S. Cl.
CPC ...
H10W 20/427 (2026.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01); H10D 84/0186 (2025.01); H10D 84/038 (2025.01); H10D 84/856 (2025.01); H10D 88/01 (2025.01);
Abstract

Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a first top transistor comprising a first source/drain (S/D) region and a first bottom transistor with a second S/D region. The first bottom transistor may be stacked directly below the first transistor. The semiconductor structure may also include a backside power delivery network (BSPDN) below the bottom transistor, a back-end-of-line (BEOL) metal level above the top transistor, and a first interlevel via electrically connecting a top of the first S/D region to the BSPDN.


Find Patent Forward Citations

Quick Actions:

Sarkar, Debarghya. (2026). Stacked field-effect transistor device with backside cut for top source/drain access (U.S. Patent No. 12653023). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12653023

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…