The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Sep. 29, 2023
International Business Machines Corporation, Armonk, NY (US);
Lijuan Zou, Slingerlands, NY (US);
Jay William Strane, Wappingers Falls, NY (US);
Junli Wang, Slingerlands, NY (US);
Brent A. Anderson, Jericho, VT (US);
Ruilong Xie, Niskayuna, NY (US);
Albert M. Chu, Nashua, NH (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure, system, and method of forming a crescent-shaped dielectric isolation layer for stacked field-effect transistors (FETs). The semiconductor structure may include a transistor including an epi. The semiconductor may also include a substrate, where the epi is directly connected to the substrate. The semiconductor may also include an isolation layer directly connected to the epi and the substrate. The system may include a semiconductor structure. The method may include forming an isolation layer directly connected to a substrate. The method may also include forming a first transistor, where forming the first transistor includes growing a first epi, where the first epi is directly connected to the isolation layer and the substrate.