The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Dec. 05, 2023
International Business Machines Corporation, Armonk, NY (US);
Lijuan Zou, Albany, NY (US);
Jay William Strane, Wappingers Falls, NY (US);
Junli Wang, Slingerlands, NY (US);
Brent A. Anderson, Jericho, VT (US);
Ruilong Xie, Niskayuna, NY (US);
Albert M. Chu, Nashua, NH (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A microelectronic structure that includes a stack nanosheet transistor comprising a lower nanosheet transistor and an upper nanosheet transistor. The lower nanosheet transistor includes a lower source/drain and the upper nanosheet transistor includes an upper source/drain. An airgap located between the upper source/drain and the lower source/drain. The airgap is vertically aligned with the upper source/drain and the lower source/drain. A first layer located between the airgap and the lower source/drain.