The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
Apr. 10, 2023
International Business Machines Corporation, Armonk, NY (US);
Brent A. Anderson, Jericho, VT (US);
Ruilong Xie, Niskayuna, NY (US);
Junli Wang, Slingerlands, NY (US);
Jay William Strane, Wappingers Falls, NY (US);
Albert M. Chu, Nashua, NH (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An air pocket is located between a top S/D region and a bottom S/D region of a stacked transistor. The air pocket reduces the parasitic capacitance between the top S/D region and the bottom S/D region, reduces the capacitance between the gate and the top S/D region, and/or reduces the capacitance between the gate and the bottom S/D region. Reduction of such capacitance(s) may improve performance of the semiconductor IC device and may allow for further semiconductor IC device scaling. A semiconductor IC device may include a bottom transistor and a top transistor. The top transistor may be vertically stacked, or aligned, with respect to the bottom transistor. The air pocket is located between, and may be vertically aligned with, the top S/D region and the bottom S/D region.