Michael P Belyansky

This inventor holds 58 USPTO granted patents and 10 published patent applications and 1 EPO patent, primarily in Field Effect Transistors (CPC class H01L). Top assignees: International Business Machines Corporation, Elpis Technologies Inc., Freescale Semiconductor,inc.. Active years: 2003-2025.

USPTO Granted Patents = 58 (Patent Applications = 10)

% Patents Active = 41.4

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 3.9

ph-index = 10

Forward Citations = 456(Granted Patents)

Forward Citations (Not Self Cited) = 444(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Danbury, CT (US) (2003)
Bethal, CT (US) (2007)
Hopewell Junction, NY (US) (2013)
Clifton Park, NY (US) (2016 - 2017)
Bethel, CT (US) (2003 - 2018)
Halfmoon, NY (US) (2019 - 2024)

Company Filing History:

57 out of 166,159

International Business Machines Corporation

patents

1 out of 52

Elpis Technologies Inc.

patents

1 out of 5,491

Freescale Semiconductor,inc.

patents

4. 1 out of 15,005

Infineon Technologies Ag

patents

5. 1 out of 244

Infineon Technologies North America Corp.

patents

where one patent can have more than one assignee

Years Active: 2003-2025

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Areas of Expertise:

Field Effect Transistors

Vertical Transport FET

Stress Modulation

Gate Stack

Replacement Metal Gate

Threshold Voltage Adjustment

Self-Aligned Gate Cap

EUV Exposure

Silicon Handler

Oxidation Method

High Strain PECVD

58 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12402391 - Stressed material within gate cut region (2025-08-26),

2. 12300615 - Infrared debond damage mitigation by copper fill pattern (2025-05-13),

3. 11908723 - Silicon handler with laser-release layers (2024-02-20),

4. 11715783 - Uniform horizontal spacer (2023-08-01),

5. 11282962 - Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT) (2022-03-22),

6. 11257716 - Self-aligned gate cap including an etch-stop layer (2022-02-22),

7. 11222820 - Self-aligned gate cap including an etch-stop layer (2022-01-11),

8. 11107814 - Vertical fin field effect transistor devices with a replacement metal gate (2021-08-31),

9. 11049858 - Vertical fin field effect transistor devices with a replacement metal gate (2021-06-29),

10. 11011624 - Vertical transport field-effect transistor (VFET) with dual top spacer (2021-05-18),

11. 11004850 - Vertical fin field effect transistor devices with a replacement metal gate (2021-05-11),

12. 10957781 - Uniform horizontal spacer (2021-03-23),

13. 10943992 - Transistor having straight bottom spacers (2021-03-09),

14. 10832973 - Stress modulation of nFET and pFET fin structures (2020-11-10),

15. 10741673 - Controlling gate profile by inter-layer dielectric (ILD) nanolaminates (2020-08-11),

Title: Michael P. Belyansky - Innovator in Semiconductor Technology

Introduction

Michael P. Belyansky, based in Bethel, Connecticut, is a prominent inventor known for his significant contributions to semiconductor technology. With an impressive portfolio of 56 patents, Belyansky has established himself as a leading figure in the field, innovating processes and technologies that enhance semiconductor manufacturing and handling.

Latest Patents

Among his most recent inventions is the "Silicon Handler with Laser-Release Layers." This innovative handler improves wafer handling methods by utilizing a bonding layer that includes a debonding layer, an optical enhancement layer, and an anti-reflection layer. The laser technology employed allows for precise debonding of the wafer, leading to more efficient processing.

Another notable patent is the "Uniform Horizontal Spacer," which describes a method and semiconductor device that facilitates the formation of variable-sized gaps between device features. This invention ensures the uniform deposition of spacer material, optimizing the manufacturing process by minimizing gap-loading effects.

Career Highlights

Throughout his career, Michael has worked with renowned companies in the field of technology, including International Business Machines Corporation (IBM) and Infineon Technologies North America Corp. His work in these organizations has further solidified his reputation as an innovator in semiconductor design and manufacturing.

Collaborations

Belyansky has collaborated with notable colleagues such as Oleg Gluschenkov and Bruce Bennett Doris, contributing to the collective advancement of semiconductor technologies. These collaborations have enhanced his research and broadened the impact of his inventions on the industry.

Conclusion

Michael P. Belyansky's contributions to semiconductor technology through his numerous patents exemplify his innovative spirit and dedication to the field. His work not only enhances the efficiency of semiconductor manufacturing but also paves the way for future advancements in technology. As he continues to innovate, Belyansky remains a key figure in shaping the landscape of semiconductor applications.