The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Dec. 29, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Michael P. Belyansky, Halfmoon, NY (US);

Oleg Gluschenkov, Tannersville, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66553 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02266 (2013.01); H01L 21/02274 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/66666 (2013.01); H01L 21/31105 (2013.01);
Abstract

In accordance with an embodiment of the present invention, a method and semiconductor device is described, including forming a plurality of gaps of variable size between device features, each of the gaps including vertical sidewalls perpendicular to a substrate surface and a horizontal surface parallel to the substrate surface. Spacer material is directionally deposited concurrently on the horizontal surface in each gap and in a flat area using a total flow rate of gaseous precursors that minimizes gap-loading in a smallest gap compared to the flat area such that the spacer material is deposited on the substrate surface in each gap and in the flat area to a uniform thickness.


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