The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Nov. 20, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Michael P. Belyansky, Halfmoon, NY (US);
Marc Bergendahl, Rensselaer, NY (US);
Victor W. C. Chan, Guilderland, NY (US);
Jeffrey C. Shearer, Albany, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 21/311 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/0276 (2013.01); H01L 21/31116 (2013.01); H01L 21/76829 (2013.01); H01L 21/823842 (2013.01);
Abstract
According to embodiments of the present invention, a method of forming a self-aligned contact includes depositing an etch-stop liner on a surface of a gate cap and a contact region. A dielectric oxide layer is deposited onto the etch-stop layer. The dielectric oxide layer and the etch-stop liner are removed in a region above the contact region to form a removed region. A contact is deposited in the etched region.