The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2020
Filed:
Oct. 19, 2018
International Business Machines Corporation, Armonk, NY (US);
Zhenxing Bi, Niskayuna, NY (US);
Muthumanickam Sankarapandian, Niskayuna, NY (US);
Richard A. Conti, Altamont, NY (US);
Michael P. Belyansky, Halfmoon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Highly selective dry etching techniques for VFET STI recess are provided. In one aspect, a method for dry etching includes: contacting a wafer including an oxide with at least one etch gas under conditions sufficient to etch the oxide at a rate of less than about 30 Å/min; removing a byproduct of the etch from the wafer using a thermal treatment; and repeating the contacting step followed by the removing step multiple times until a desired recess of the oxide has been achieved. A method of forming a VFET device is also provided.