The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Dec. 29, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Donald Canaperi, Bridgewater, CT (US);

Richard A. Conti, Altamont, NY (US);

Thomas J. Haigh, Jr., Claverack, NY (US);

Eric Miller, Watervliet, NY (US);

Son Nguyen, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/0234 (2013.01); H01L 21/02167 (2013.01); H01L 21/02203 (2013.01); H01L 21/02274 (2013.01); H01L 29/41775 (2013.01); H01L 29/41791 (2013.01);
Abstract

A method of making a semiconductor device includes forming a gate stack on a substrate. The method further includes depositing a first spacer layer on a sidewall of the gate stack. The first spacer layer includes silicon and carbon. The method includes performing a first nitrogen plasma treatment process on the first spacer layer to increase a density of the first spacer layer. The method further includes depositing a second spacer layer on the first spacer layer. The second spacer layer includes silicon, carbon, and nitrogen.


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