Sadanand Vinayak Deshpande

This inventor holds 18 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: International Business Machines Corporation. Active years: 2003-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sadanand Vinayak Deshpande. Retrieved from https://idiyas.com/inventor/sadanand-vinayak-deshpande

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 18

% Patents Active = 38.9

Average Co-Inventor Count = 4.5

ph-index = 9

Forward Citations = 860(Granted Patents)

Location History:

LaGrangeville, NY (US) (2008)
LeGrangeville, NY (US) (2008)
Lagrangeville, NJ (US) (2009)
Fishkill, NY (US) (2003 - 2010)
Bengaluru, IN (2016)

Company Filing History:

18 out of 166,409

International Business Machines Corporation

patents

Years Active: 2003-2016

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Areas of Expertise:

EUV Radiation Source

MOSFET

Doped Nitride Film

Nitrogen Plasma Treatment

Dielectric Contacts

Plasma Etching

Silicon Etching

Critical Dimension Control

Sub-Lithographic Features

Silicide Contacts

Contact Structure

Thin Film Technology

18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9451684 - Dual pulse driven extreme ultraviolet (EUV) radiation source method (2016-09-20),

2. 9301381 - Dual pulse driven extreme ultraviolet (EUV) radiation source utilizing a droplet comprising a metal core with dual concentric shells of buffer gas (2016-03-29),

3. 7700425 - Raised source drain mosfet with amorphous notched gate cap layer with notch sidewalls passivated and filled with dielectric plug (2010-04-20),

4. 7595010 - Method for producing a doped nitride film, doped oxide film and other doped films (2009-09-29),

5. 7479688 - STI stress modification by nitrogen plasma treatment for improving performance in small width devices (2009-01-20),

6. 7407875 - Low resistance contact structure and fabrication thereof (2008-08-05),

7. 7361611 - Doped nitride film, doped oxide film and other doped films (2008-04-22),

8. 7354867 - Etch process for improving yield of dielectric contacts on nickel silicides (2008-04-08),

9. 7344983 - Clustered surface preparation for silicide and metal contacts (2008-03-18),

10. 7091081 - Method for patterning a semiconductor region (2006-08-15),

11. 6960510 - Method of making sub-lithographic features (2005-11-01),

12. 6930030 - Method of forming an electronic device on a recess in the surface of a thin film of silicon etched to a precise thickness (2005-08-16),

13. 6903023 - In-situ plasma etch for TERA hard mask materials (2005-06-07),

14. 6887798 - STI stress modification by nitrogen plasma treatment for improving performance in small width devices (2005-05-03),

15. 6884734 - Vapor phase etch trim structure with top etch blocking layer (2005-04-26),

Title: Sadanand Vinayak Deshpande - Pioneering Inventor from Fishkill, NY

Introduction: Sadanand Vinayak Deshpande is a renowned inventor based in Fishkill, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Deshpande holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Deshpande has worked with leading tech companies, research institutions, and universities, driving forward cutting-edge projects and pushing the boundaries of technological advancement.

Collaborations: Throughout his career, Deshpande has collaborated with top scientists, engineers, and inventors from around the world, fostering a culture of innovation and knowledge-sharing in the industry.

Conclusion: Sadanand Vinayak Deshpande's relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his reputation as a trailblazing inventor in the tech world.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]