The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2008
Filed:
Feb. 08, 2006
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Judson Holt, Wappingers Falls, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Sadanand V. Deshpande, Lagrangeville, NY (US);
Rangarajan Jagannathan, East Fishkill, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Judson Holt, Wappingers Falls, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Sadanand V. Deshpande, Lagrangeville, NY (US);
Rangarajan Jagannathan, East Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Adding at least one non-silicon precursor (such as a germanium precursor, a carbon precursor, etc.) during formation of a silicon nitride, silicon oxide, silicon oxynitride or silicon carbide film improves the deposition rate and/or makes possible tuning of properties of the film, such as tuning of the stress of the film. Also, in a doped silicon oxide or doped silicon nitride or other doped structure, the presence of the dopant may be used for measuring a signal associated with the dopant, as an etch-stop or otherwise for achieving control during etching.