IDiyas

For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Ashima B Chakravarti

USPTO Granted Patents = 37 


Average Co-Inventor Count = 4.3

ph-index = 9

Forward Citations = 740(Granted Patents)


Location History:

  • Hopewell, NY (US) (2012)
  • Hopewell Junction, NY (US) (1997 - 2014)

Company Filing History:

goldMedal35 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal1 out of 993 
 
Novellus Systems Incorporated
 patents
bronzeMedal1 out of 13,684 
 
Applied Materials, Inc.
 patents
4. 1 out of 1 
 
Sienens Aktiengesellschaft
 patent
5. 1 out of 3,768 
 
Lam Research Corporation
 patents
6. 1 out of 1,016 
 
Globalfoundries Singapore Pte. Ltd.
 patents
7. 2 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1997-2014

where 'Filed Patents' based on already Granted Patents

37 patents (USPTO):
1. 8900961 - Selective deposition of germanium spacers on nitride (2014-12-02),
2. 8685845 - Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas (2014-04-01),
3. 8575655 - Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering (2013-11-05),
4. 8563446 - Technique to create a buried plate in embedded dynamic random access memory device (2013-10-22),
5. 8440547 - Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering (2013-05-14),
6. 8389352 - Silicon germanium film formation method and structure (2013-03-05),
7. 8236710 - Technique to create a buried plate in embedded dynamic random access memory device (2012-08-07),
8. 8173524 - Process for epitaxially growing epitaxial material regions (2012-05-08),
9. 8105955 - Integrated circuit system with carbon and non-carbon silicon (2012-01-31),
10. 8080451 - Fabricating semiconductor structures (2011-12-20),
11. 7888241 - Selective deposition of germanium spacers on nitride (2011-02-15),
12. 7838932 - Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon (2010-11-23),
13. 7776624 - Method for improving semiconductor surfaces (2010-08-17),
14. 7767579 - Protection of SiGe during etch and clean operations (2010-08-03),
15. 7759213 - Pattern independent Si:C selective epitaxy (2010-07-20),

Title: Ashima B Chakravarti - Pioneering Inventor from Hopewell Junction

Introduction: Ashima B Chakravarti is a highly accomplished inventor based in Hopewell Junction, NY, known for her groundbreaking contributions to various fields of technology and innovation.

Latest Patents: Ashima B Chakravarti holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing her diverse range of expertise and innovative thinking.

Career Highlights: With over two decades of experience in the industry, Ashima has worked with renowned research institutions and leading tech companies, consistently pushing the boundaries of what is possible through her inventive solutions.

Collaborations: Throughout her career, Ashima has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and patents.

Conclusion: Ashima B Chakravarti's passion for innovation and her relentless drive to create solutions that make a difference have solidified her reputation as a trailblazing inventor in the technology landscape.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…