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For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Ashima B Chakravarti

This inventor holds 37 USPTO granted patents and 1 published patent application and 1 EPO patent, primarily in Semiconductor Fabrication. Top assignees: International Business Machines Corporation, Applied Materials, Inc., Globalfoundries Singapore Pte. Ltd.. Active years: 1997-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ashima B Chakravarti. Retrieved from https://idiyas.com/inventor/ashima-b-chakravarti

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 37 

% Patents Active = 51.4


Average Co-Inventor Count = 4.3

ph-index = 9

Forward Citations = 744(Granted Patents)


Location History:

  • Hopewell, NY (US) (2012)
  • Hopewell Junction, NY (US) (1997 - 2014)

Company Filing History:

goldMedal35 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal1 out of 14,454 
 
Applied Materials, Inc.
 patents
bronzeMedal1 out of 1,060 
 
Globalfoundries Singapore Pte. Ltd.
 patents
4. 1 out of 3,945 
 
Lam Research Corporation
 patents
5. 1 out of 993 
 
Novellus Systems Incorporated
 patents
6. 1 out of 30,874 
 
Siemens Aktiengesellschaft
 patents
7. 2 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1997-2014

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Areas of Expertise:
Semiconductor Structures
SiGe Channel Engineering
Selective Deposition
PMOS Devices
Dynamic Random Access Memory
Chemical Vapor Deposition
Epitaxial Growth
High Density Devices
Carbon Doping
Silicon Films
Low Temperature Processes
Integrated Circuits
37 patents (USPTO):Explore Patents
1. 8900961 - Selective deposition of germanium spacers on nitride (2014-12-02),
2. 8685845 - Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas (2014-04-01),
3. 8575655 - Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering (2013-11-05),
4. 8563446 - Technique to create a buried plate in embedded dynamic random access memory device (2013-10-22),
5. 8440547 - Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering (2013-05-14),
6. 8389352 - Silicon germanium film formation method and structure (2013-03-05),
7. 8236710 - Technique to create a buried plate in embedded dynamic random access memory device (2012-08-07),
8. 8173524 - Process for epitaxially growing epitaxial material regions (2012-05-08),
9. 8105955 - Integrated circuit system with carbon and non-carbon silicon (2012-01-31),
10. 8080451 - Fabricating semiconductor structures (2011-12-20),
11. 7888241 - Selective deposition of germanium spacers on nitride (2011-02-15),
12. 7838932 - Raised STI structure and superdamascene technique for NMOSFET performance enhancement with embedded silicon carbon (2010-11-23),
13. 7776624 - Method for improving semiconductor surfaces (2010-08-17),
14. 7767579 - Protection of SiGe during etch and clean operations (2010-08-03),
15. 7759213 - Pattern independent Si:C selective epitaxy (2010-07-20),

Title: Ashima B Chakravarti - Pioneering Inventor from Hopewell Junction

Introduction: Ashima B Chakravarti is a highly accomplished inventor based in Hopewell Junction, NY, known for her groundbreaking contributions to various fields of technology and innovation.

Latest Patents: Ashima B Chakravarti holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing her diverse range of expertise and innovative thinking.

Career Highlights: With over two decades of experience in the industry, Ashima has worked with renowned research institutions and leading tech companies, consistently pushing the boundaries of what is possible through her inventive solutions.

Collaborations: Throughout her career, Ashima has collaborated with top engineers, scientists, and researchers, fostering a culture of innovation and knowledge-sharing that has led to numerous successful projects and patents.

Conclusion: Ashima B Chakravarti's passion for innovation and her relentless drive to create solutions that make a difference have solidified her reputation as a trailblazing inventor in the technology landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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