The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Feb. 11, 2011
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Abhishek Dube, Fishkill, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Abhishek Dube, Fishkill, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Epitaxial deposition of silicon germanium in a semiconductor device is achieved without using masks. Nucleation delays induced by interactions with dopants present before deposition of the silicon germanium are used to determine a period over which an exposed substrate surface may be subjected to epitaxial deposition to form a layer of SiGe on desired parts with substantially no deposition on other parts. Dopant concentration may be changed to achieve desired thicknesses within preferred deposition times. Resulting deposited SiGe is substantially devoid of growth edge effects.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile