The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 08, 2012

Filed:

Jan. 11, 2011
Applicants:

Ashima B. Chakravarti, Hopewell Junction, NY (US);

Anthony I. Chou, Beacon, NY (US);

Abhishek Dube, Fishkill, NY (US);

Dominic J. Schepis, Wappingers Falls, NY (US);

Inventors:

Ashima B. Chakravarti, Hopewell Junction, NY (US);

Anthony I. Chou, Beacon, NY (US);

Abhishek Dube, Fishkill, NY (US);

Dominic J. Schepis, Wappingers Falls, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods form epitaxial materials by forming at least two gate stacks on a silicon substrate and forming sidewall spacers on sides of the gate stacks. Such methods pattern a recess in the silicon substrate between adjacent ones of the gate stacks. The methods also provide a liner in a bottom of the recess, and epitaxially grow epitaxial material from sidewalls of the recess to fill the recess with the epitaxial material.


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