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For the Inventor, By the Inventor

Beacon, NY, United States of America

Anthony I Chou

USPTO Granted Patents = 72 

Average Co-Inventor Count = 4.2

ph-index = 9

Forward Citations = 317(Granted Patents)

Forward Citations (Not Self Cited) = 226(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yorktown Heights, NY (US) (2004)
  • Fishkill, NY (US) (2005)
  • Hopewell Jct., NY (US) (2012)
  • Hopewell Junction, NY (US) (2011 - 2013)
  • Beacon, NY (US) (2002 - 2020)
  • Becon, NY (US) (2021)
  • Guilderland, NY (US) (2024)

Company Filing History:

goldMedal59 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal10 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 10,326 
 
Tokyo Electron Limited
 patents
4. 2 out of 1,855 
 
Adeia Semiconductor Bonding Technologies Inc.
 patents
5. 1 out of 59 
 
Globalfoundries U.S. 2 LLC
 patents
where one patent can have more than one assignee

Years Active: 2002-2025

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Areas of Expertise:
Nanosheets
Field Effect Transistors
Electrostatic Discharge
High-k Dielectric
Semiconductor Structures
FinFET Devices
On-chip Resistors
Junction Butting
Non-volatile Memory
CMOS Technology
Buried Oxide
Gated Diode Structures
72 patents (USPTO):Explore Patents
1. 12453170 - Integration of nanosheets with bottom dielectric isolation and ideal diode (2025-10-21),
2. 12040250 - Heat pipe for vertically stacked field effect transistors (2024-07-16),
3. 11894361 - Co-integrated logic, electrostatic discharge, and well contact devices on a substrate (2024-02-06),
4. 11101357 - Asymmetric high-k dielectric for reducing gate induced drain leakage (2021-08-24),
5. 10734492 - Asymmetric high-k dielectric for reducing gate induced drain leakage (2020-08-04),
6. 10580686 - Semiconductor structure with integrated passive structures (2020-03-03),
7. 10381452 - Asymmetric high-k dielectric for reducing gate induced drain leakage (2019-08-13),
8. 10374048 - Asymmetric high-k dielectric for reducing gate induced drain leakage (2019-08-06),
9. 10367072 - Asymmetric high-k dielectric for reducing gate induced drain leakage (2019-07-30),
10. 10256152 - Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge (2019-04-09),
11. 10242906 - Semiconductor structure with integrated passive structures (2019-03-26),
12. 10049942 - Asymmetric semiconductor device and method of forming same (2018-08-14),
13. 10032862 - Semiconductor structure with integrated passive structures (2018-07-24),
14. 10014364 - On-chip resistors with a tunable temperature coefficient of resistance (2018-07-03),
15. 9923082 - Junction butting structure using nonuniform trench shape (2018-03-20),

Title: The Innovative Journey of Anthony I Chou

Introduction: Anthony I Chou, a talented inventor based in Beacon, NY (US), has made significant contributions to the field of technology through his creative and groundbreaking inventions.

Latest Patents: Anthony I Chou holds several patents in various technological domains, showcasing his versatility and ingenuity in innovation.

Career Highlights: Throughout his illustrious career, Anthony I Chou has been recognized for his pioneering work in developing cutting-edge solutions that have revolutionized the industry. His dedication to pushing the boundaries of technology has led to the creation of groundbreaking inventions that have had a lasting impact.

Collaborations: Anthony I Chou has collaborated with leading experts and organizations in the technology sector, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have resulted in the development of groundbreaking technologies that have set new industry standards.

Conclusion: Anthony I Chou's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His remarkable inventions continue to inspire and shape the future of technological advancements.

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