The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2024
Filed:
Dec. 08, 2021
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Sagarika Mukesh, Albany, NY (US);
Anthony I. Chou, Guilderland, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Junli Wang, Slingerlands, NY (US);
Effendi Leobandung, Stormville, NY (US);
Jingyun Zhang, Albany, NY (US);
Nicolas Loubet, Guilderland, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A semiconductor device is provided. The semiconductor device includes a first field effect device on a first region of a substrate, wherein a first gate structure and an electrostatic discharge device on a second region of the substrate, wherein a second gate structure for the electrostatic discharge device is separated from the substrate by the bottom dielectric layer, and a second source/drain for the electrostatic discharge device is in electrical contact with the substrate, wherein the second source/drain is doped with a second dopant type.