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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10374048 B1

PDFFull Text
Date of Patent:
Aug. 06, 2019

Filed:

Nov. 15, 2017

Asymmetric high-k dielectric for reducing gate induced drain leakage

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anthony I. Chou, Beacon, NY (US);

Arvind Kumar, Beacon, NY (US);

Chung-Hsun Lin, White Plains, NY (US);

Shreesh Narasimha, Beacon, NY (US);

Claude Ortolland, Peekskill, NY (US);

Jonathan T. Shaw, Rego Park, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Alvin Borromeo

Andrew M. Calderon

Roberts Mlotkowski Safran Cole & Calderon P.C.

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01); H01L 21/426 (2006.01); H01L 21/8234 (2006.01); H01L 21/3115 (2006.01); H01L 21/324 (2006.01); H01L 29/40 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01); H01L 21/283 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42368 (2013.01); H01L 21/0223 (2013.01); H01L 21/02181 (2013.01); H01L 21/02247 (2013.01); H01L 21/02255 (2013.01); H01L 21/02323 (2013.01); H01L 21/02332 (2013.01); H01L 21/265 (2013.01); H01L 21/26586 (2013.01); H01L 21/283 (2013.01); H01L 21/28158 (2013.01); H01L 21/28176 (2013.01); H01L 21/28185 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/31155 (2013.01); H01L 21/324 (2013.01); H01L 21/426 (2013.01); H01L 21/823462 (2013.01); H01L 21/845 (2013.01); H01L 29/401 (2013.01); H01L 29/41791 (2013.01); H01L 29/4238 (2013.01); H01L 29/42356 (2013.01); H01L 29/511 (2013.01); H01L 29/512 (2013.01); H01L 29/517 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7856 (2013.01);
Abstract

An asymmetric high-k dielectric for reduced gate induced drain leakage in high-k MOSFETs and methods of manufacture are disclosed. The method includes performing an implant process on a high-k dielectric sidewall of a gate structure. The method further includes performing an oxygen annealing process to grow an oxide region on a drain side of the gate structure, while inhibiting oxide growth on a source side of the gate structure adjacent to a source region.

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