= 1.06 Inventors with similar research interests:
Location History:
- Hopewell Junction, NY (US) (2015)
- While Plains, NY (US) (2015)
- Yorktown Heights, NY (US) (2011 - 2018)
- White Plains, NY (US) (2012 - 2021)
Years Active: 2011-2021
Title: Chung-Hsun Lin: Innovative Patents and Career Highlights
Introduction:
This article highlights the remarkable achievements and contributions of Chung-Hsun Lin, an inventive mind and accomplished professional in the field of inventions and patents. Lin, based in White Plains, NY (US), has an impressive track record of 133 patents and has made significant advancements in reducing gate induced drain leakage in high-k MOSFETs. Let's delve into his latest patents, career highlights, and collaborations.
Latest Patents:
One of Lin's notable patents is related to an asymmetric high-k dielectric for reducing gate-induced drain leakage in high-k MOSFETs. This patent reveals a method involving an implant process on a high-k dielectric sidewall of a gate structure. Furthermore, an oxygen annealing process is performed to grow an oxide region on the drain side of the gate structure while inhibiting oxide growth on the source side adjacent to a source region. This innovative approach contributes to improved performance and efficiency in MOSFETs.
Career Highlights:
During his career, Lin has made significant contributions to prominent companies in the technology industry. He has worked with IBM (International Business Machines Corporation) and Globalfoundries Inc. His association with these prestigious enterprises demonstrates his expertise and dedication to the field of innovations.
Collaborations:
Lin's collaborative spirit is evident through his partnerships with esteemed coworkers. Two notable collaborators are Jeffrey W Sleight and Josephine B Chang. Their collective efforts have likely contributed to the successful development and implementation of various inventions and patents.
Conclusion:
Chung-Hsun Lin's numerous patents and expertise in reducing gate-induced drain leakage in high-k MOSFETs exemplify his outstanding contributions to the field of innovations and patents. Through his career at renowned companies like IBM and Globalfoundries, Lin has undoubtedly left a substantial impact on the technological landscape. His collaborations with talented individuals like Jeffrey W Sleight and Josephine B Chang further showcase his dedication to pushing boundaries and advancing the forefront of technological advancements. Chung-Hsun Lin's inventive mindset continues to shape the industry and inspire future generations of innovators.
Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.