The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2018
Filed:
May. 11, 2017
Globalfoundries Inc., Grand Cayman, KY;
Veeraraghavan S. Basker, Schenectady, NY (US);
Chung-Hsun Lin, White Plains, NY (US);
Zuoguang Liu, Schenectady, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Chun-Chen Yeh, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY (US);
Abstract
This disclosure relates to a fin field effect transistor including a gate structure formed on a fin. Source and drain (S/D) regions are epitaxially grown on the fin adjacent to the gate structure. The S/D regions include a diamond-shaped cross section wherein the diamond-shaped cross section includes: internal sidewalls where the fin was recessed to a reduced height, and an external top portion of the diamond-shaped cross section of the S/D regions. A contact liner is formed over the internal sidewalls and the top portion of the diamond-shaped cross section of the S/D regions; and contacts are formed over the contact liner and over the internal sidewalls and the top portion of the diamond-shaped cross section of the S/D regions.