The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2018

Filed:

May. 12, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Josephine B. Chang, Mahopac, NY (US);

Leland Chang, New York, NY (US);

Michael A. Guillorn, Yorktown Heights, NY (US);

Chung-Hsun Lin, White Plains, NY (US);

Adam M. Pyzyna, Courtlandt Manor, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 27/12 (2006.01); H01L 21/74 (2006.01); H01L 23/535 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); H01L 21/743 (2013.01); H01L 21/76895 (2013.01); H01L 23/5286 (2013.01); H01L 23/535 (2013.01); H01L 27/1203 (2013.01);
Abstract

An electronic device is provided. The electronic device includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, circuitry disposed on the dielectric layer that includes interconnected cells, first contact line metallization and second contact line metallization, first power metallization disposed in-plane with or above the circuitry and second power metallization disposed in a trench defined in at least the dielectric layer. The electronic device further includes insulation disposed to insulate the second power metallization from the circuitry and the first power metallization at first locations and to permit electrical communication between the second power metallization, the circuitry and the first power metallization at second locations.


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