The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

May. 17, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Anthony I. Chou, Guilderland, NY (US);

Brent A. Anderson, Jericho, VT (US);

John Christopher Arnold, North Chatham, NY (US);

Junli Wang, Slingerlands, NY (US);

Kai Zhao, Albany, NY (US);

Terence Hook, Jericho Center, VT (US);

Julien Frougier, Albany, NY (US);

Xuefeng Liu, Schenectady, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H01L 21/02 (2006.01); H01L 21/74 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H10D 62/118 (2025.01); H01L 21/0237 (2013.01); H01L 21/0259 (2013.01); H01L 21/743 (2013.01); H01L 21/76829 (2013.01); H01L 21/76898 (2013.01);
Abstract

A method including forming an oxide layer on a first substrate and forming a second substrate on the oxide layer. Doping a first section of the second substrate while not doping a second section of the second substrate. Forming a first nano device on the second section of the second substrate and forming a second nano device on first section of the second substrate. Flipping the first substrate over to allow for backside processing of the substrate and forming at least one backside contact connected to the first nano device while backside contacts are not formed or connected to the second nano device.


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