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For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Kai Zhao

USPTO Granted Patents = 19 

Average Co-Inventor Count = 4.8

ph-index = 5

Forward Citations = 108(Granted Patents)


Location History:

  • Fishkill, NY (US) (2012 - 2014)
  • Hopewell junction, NY (US) (2015 - 2021)
  • Latham, NY (US) (2019 - 2021)
  • Albany, NY (US) (2021 - 2024)

Company Filing History:

goldMedal11 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal4 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 927 
 
Globalfoundries U.S. Inc.
 patents
4. 1 out of 15,458 
 
University of California
 patents
5. 1 out of 832,680 
Other
 patents

Years Active: 2012-2025

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19 patents (USPTO):
1. 12268031 - Backside power rails and power distribution network for density scaling (2025-04-01),
2. 12068415 - Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance (2024-08-20),
3. 11908907 - VFET contact formation (2024-02-20),
4. 11888048 - Gate oxide for nanosheet transistor devices (2024-01-30),
5. 11515427 - Precise bottom junction formation for vertical transport field effect transistor with highly doped epitaxial source/drain, sharp junction gradient, and/or reduced parasitic capacitance (2022-11-29),
6. 11211474 - Gate oxide for nanosheet transistor devices (2021-12-28),
7. 10991796 - Source/drain contact depth control (2021-04-27),
8. 10991689 - Additional spacer for self-aligned contact for only high voltage FinFETs (2021-04-27),
9. 10361132 - Structures with thinned dielectric material (2019-07-23),
10. 10354999 - Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate (2019-07-16),
11. 9818746 - Structure and method to suppress work function effect by patterning boundary proximity in replacement metal gate (2017-11-14),
12. 9620384 - Control of O-ingress into gate stack dielectric layer using oxygen permeable layer (2017-04-11),
13. 9461149 - Nanowire structure with selected stack removed for reduced gate resistance and method of fabricating same (2016-10-04),
14. 9287185 - Determining appropriateness of sampling integrated circuit test data in the presence of manufacturing variations (2016-03-15),
15. 9269786 - Silicon nitride layer deposited at low temperature to prevent gate dielectric regrowth high-K metal gate field effect transistors (2016-02-23),

Title: **The Innovative Contributions of Kai Zhao in Semiconductor Technology**

Introduction

Kai Zhao is a prolific inventor based in Hopewell Junction, NY, with an impressive portfolio comprising 19 patents to his name. His work primarily focuses on advancements in semiconductor technologies, contributing significantly to the field through innovative designs and applications.

Latest Patents

Among his latest inventions, Zhao has developed a device featuring backside power rails and a power distribution network aimed at density scaling. This innovative device includes a first interconnect structure and a second interconnect structure, integrating first and second cells, each comprising a transistor. This design is aimed at enhancing the efficiency and performance of integrated circuits.

Another notable patent addresses the precise bottom junction formation for vertical transport field-effect transistors. This invention details a method for epitaxially growing lower source-drain regions within a substrate, bordered by undoped silicon to optimize junction performance and reduce parasitic capacitance. The intricacies of this design allow for improved transistor performance in modern electronics.

Career Highlights

Kai Zhao has held significant positions in some of the industry's leading companies, including IBM and GlobalFoundries Inc. These roles have allowed him to apply his innovative ideas in practical applications, leading to groundbreaking developments in semiconductor technology.

Collaborations

Throughout his career, Zhao has collaborated with esteemed colleagues, including Shahab Siddiqui and Daniel James Dechene. These partnerships have fostered an environment of creativity and advancement, driving forward the state of technology in significant ways.

Conclusion

With 19 patents under his belt, Kai Zhao exemplifies the spirit of innovation in the semiconductor industry. His contributions not only advance technology but also inspire future inventors striving to make their mark in this dynamic field.

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