The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Mar. 31, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Ruqiang Bao, Wappingers Falls, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Aritra Dasgupta, Wappingers Falls, NY (US);
Kai Zhao, Latham, NY (US);
Unoh Kwon, Clifton Park, NY (US);
Siddarth A. Krishnan, Peerskill, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823857 (2013.01); H01L 21/02181 (2013.01); H01L 21/28088 (2013.01); H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 21/28556 (2013.01); H01L 21/31111 (2013.01); H01L 21/31122 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 27/0922 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.