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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11908907 B1

PDFFull Text
Date of Patent:
Feb. 20, 2024

Filed:

Dec. 11, 2020

Vfet contact formation

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Heng Wu, Guilderland, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Tian Shen, Clifton Park, NY (US);

Kai Zhao, Albany, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

L. Jeffrey Kelly

Primary Examiner:

Michael M Trinh

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 21/823885 (2013.01); H01L 27/092 (2013.01); H01L 29/45 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

An embodiment of the invention may include a Vertical Field Effect Transistor (VFET) structure, and method of making that structure, having a first VFET and a second VFET. The first VFET may include a single liner between a first source/drain epi and a contact. The second VFET may include two liners between a second source/drain epi and a contact. This may enable proper contact liner matching for differing VFET devices.

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Wu, Heng. (2024). Vfet contact formation (U.S. Patent No. 11908907). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11908907

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