The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
Aug. 20, 2010
Abhishek Dube, Fishkill, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Jinghong H. LI, Poughquag, NY (US);
Rainer Loesing, Newburgh, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Abhishek Dube, Fishkill, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Jinghong H. Li, Poughquag, NY (US);
Rainer Loesing, Newburgh, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for depositing epitaxial films of silicon carbon (Si:C). In one embodiment, the method includes depositing an n-type doped silicon carbon (Si:C) semiconductor material on a semiconductor deposition surface using a deposition gas precursor composed of a silane containing gas precursor, a carbon containing gas precursor, and an n-type gas dopant source. The deposition gas precursor is introduced to the semiconductor deposition surface with a hydrogen (H) carrier gas. The method for depositing epitaxial films may include an etch reaction provided by hydrogen chloride (HCl) gas etchant and a hydrogen (H) carrier gas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile