The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Mar. 27, 2012
Stephen W. Bedell, Wappingers Falls, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Judson R. Holt, Wappingers Falls, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Judson R. Holt, Wappingers Falls, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Various techniques for changing the workfunction of the substrate by using a SiGe channel which, in turn, changes the bandgap favorably for a p-type metal oxide semiconductor field effect transistors (pMOSFETs) are disclosed. In the various techniques, a SiGe film that includes a low doped SiGe region above a more highly doped SiGe region to allow the appropriate threshold voltage (Vt) for pMOSFET devices while preventing pitting, roughness and thinning of the SiGe film during subsequent cleans and processing is provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile