The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2010
Filed:
Feb. 08, 2008
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Judson R. Holt, Wappingers Falls, NY (US);
Yaocheng Liu, Elmsford, NY (US);
Kern Rim, Yorktown Heights, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Dureseti Chidambarrao, Weston, CT (US);
Judson R. Holt, Wappingers Falls, NY (US);
Yaocheng Liu, Elmsford, NY (US);
Kern Rim, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An embedded silicon carbon (Si:C) having a substitutional carbon content in excess of one percent in order to effectively increase electron mobility by application of tension to a channel region of an NFET is achieved by overfilling a gap or trench formed by transistor gate structures with Si:C and polishing an etching the Si:C to or below a surface of a raised gate structure in a super-Damascene process, leaving Si:C only in selected regions above the transistor source and drain, even though processes capable of depositing Si:C with sufficiently high substitutional carbon content are inherently non-selective.