The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2011
Filed:
Jan. 08, 2010
Thomas N. Adam, Poughkeepsie, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Eric C. T. Harley, LaGrangeville, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Thomas N. Adam, Poughkeepsie, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Eric C. T. Harley, LaGrangeville, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Solutions for fabricating a semiconductor structure. One embodiment includes a method for fabricating a semiconductor structure, the method including: forming a first dielectric structure on a substrate, the first dielectric structure including silicon nitride (SiN); forming a second dielectric structure in proximity to the first dielectric structure; and growing a non-epitaxial thin film from a surface of the first dielectric structure; wherein the growing includes using a combination of precursor, carrier and etchant with a ratio among the precursor, carrier, and etchant being adjusted for selective growth of the thin film on the surface, and wherein the thin film includes one selected from a group consisting of: a monocrystalline material, an amorphous material, a polycrystalline material and a combination thereof.