Lagrangeville, NY, United States of America

Eric C T Harley

USPTO Granted Patents = 10 

Average Co-Inventor Count = 6.0

ph-index = 3

Forward Citations = 38(Granted Patents)


Location History:

  • LaGrangeville, NY (US) (2010 - 2017)
  • Bel Air, MD (US) (2016 - 2017)

Company Filing History:


Years Active: 2010-2017

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):

Title: The Innovative Contributions of Eric C T Harley

Introduction

Eric C T Harley is a prominent inventor based in Lagrangeville, NY (US). He holds a total of 10 patents, showcasing his significant contributions to the field of semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor structures, particularly in the area of FinFET technology.

Latest Patents

Among his latest patents is the "Diamond shaped source drain epitaxy with underlying buffer layer." This patent describes a semiconductor structure that includes a fin upon a semiconductor substrate. A clean epitaxial growth surface is achieved by forming a buffer layer upon the fin sidewalls and the upper surface of the fin. The buffer layer may be epitaxially grown, allowing for diamond shaped epitaxy to be grown from the buffer layer sidewalls. In some implementations, this diamond shaped epitaxy may be merged with surrounding dielectric, where the dopant concentration of the surrounding dielectric is higher than that of the diamond shaped epitaxy. Another notable patent is the "Epitaxial growth of material on source/drain regions of FinFET structure." This patent outlines a method for producing a semiconductor structure that involves partial removal of an insulating layer around a semiconductor fin, followed by epitaxially growing an additional semiconductor material in the exposed regions while maintaining the fin's shape with the insulating layer.

Career Highlights

Eric has worked with leading companies in the semiconductor industry, including Globalfoundries Inc. and International Business Machines Corporation (IBM). His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Throughout his career, Eric has collaborated with notable professionals in the field, including Judson Robert Holt and Yue Ke. These collaborations have further enriched his work and expanded the impact of his inventions.

Conclusion

Eric C T Harley's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in semiconductor structures and epitaxial growth methods.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…