The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 15, 2016
Filed:
Dec. 05, 2014
Globalfoundries Inc., Grand Cayman, KY;
Kangguo Cheng, Schenectady, NY (US);
Eric C. T. Harley, Bel Air, MD (US);
Judson R. Holt, Wappingers Falls, NY (US);
Gauri V. Karve, Cohoes, NY (US);
Yue Ke, Hopewell Junction, NY (US);
Derrick Liu, Albany, NY (US);
Timothy J. McArdle, Hopewell Junction, NY (US);
Shogo Mochizuki, Clifton Park, NY (US);
Alexander Reznicek, Troy, NY (US);
Melissa A. Smith, Wappingers Falls, NY (US);
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Embodiments of the present invention provide a method for epitaxially growing a FinFET. One method may include providing a semiconductor substrate including an insulator and an underlayer; forming a channel layer on the semiconductor substrate using epitaxial growth; etching a recess into the channel layer and epitaxially regrowing a portion on the channel layer; etching the channel layer and the underlayer to form fins; forming a gate structure and a set of spacers; etching a source drain region into the channel layer; and forming a source drain material in the source drain region.