The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Mar. 09, 2015
Globalfoundries Inc., Grand Cayman, KY;
Veeraraghavan S. Basker, Schenectady, NY (US);
Eric C. T. Harley, Lagrangeville, NY (US);
Yue Ke, Fishkill, NY (US);
Alexander Reznicek, Troy, NY (US);
Henry K. Utomo, Newburgh, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A semiconductor structure includes a fin upon a semiconductor substrate. A clean epitaxial growth surface is provided by forming a buffer layer upon fin sidewalls and an upper surface of the fin. The buffer layer may be epitaxially grown. Diamond shaped epitaxy is grown from the buffer layer sidewalls. In some implementations, the diamond shaped epitaxy may be subsequently merged with surrounding dielectric. A dopant concentration of the surrounding dielectric may be higher than a dopant concentration of the diamond shaped epitaxy.