The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Sep. 29, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Michael P. Chudzik, Sunnyvale, CA (US);
Brian J. Greene, Fishkill, NY (US);
Eric C. T. Harley, Bel Air, MD (US);
Judson R. Holt, Wappingers Falls, NY (US);
Yue Ke, Fishkill, NY (US);
Rishikesh Krishnan, Painted Post, NY (US);
Renee T. Mo, Yorktown Heights, NY (US);
Yinxiao Yang, Beacon, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01);
Abstract
A method for producing a semiconductor structure, as well as a semiconductor structure, that uses a partial removal of an insulating layer around a semiconductor fin, and subsequently epitaxially growing an additional semiconductor material in the exposed regions, while maintaining the shape of the fin with the insulating layer.