The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Dec. 12, 2007
Ashima B Chakravarti, Hopewell Junction, NY (US);
Zhijiong Luo, Carmel, NY (US);
Renee Tong MO, Briarcliff Manor, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Katsunori Onishi, Fukuoka, JP;
Ashima B Chakravarti, Hopewell Junction, NY (US);
Zhijiong Luo, Carmel, NY (US);
Renee Tong Mo, Briarcliff Manor, NY (US);
Shreesh Narasimha, Beacon, NY (US);
Katsunori Onishi, Fukuoka, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of making a semiconductor device includes forming a transistor structure having one of an embedded epitaxial stressed material in a source and drain region and a stressed channel and well, subjecting the transistor structure to plasma oxidation, and removing spacer material from the transistor structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile