Poughkeepsie, NY, United States of America

Zhijiong Luo

USPTO Granted Patents = 180 

 

Average Co-Inventor Count = 3.1

ph-index = 13

Forward Citations = 1,040(Granted Patents)

Forward Citations (Not Self Cited) = 1,017(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hopewell Junction, NY (US) (2011)
  • Poughkepsie, NY (US) (2013)
  • Poughkeepsi, NY (US) (2013)
  • Carmel, NY (US) (2006 - 2015)
  • Beijing, CN (2012 - 2015)
  • Poukeepsie, NY (US) (2016)
  • Poughkeepsie, NY (US) (2012 - 2018)

Company Filing History:


Years Active: 2006-2018

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Areas of Expertise:
Mosfet
Dual Channel Memory
Fin Field Effect Transistor
Thermal Dissipation
Quasi-Nanowire Transistor
Semiconductor Structure
Backside Through Silicon Vias
Graphene Nano-Ribbon
Floating Body Effect
Strained Channel Transistor
Non-Volatile Memory Device
Flash Memory Device
180 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Zhijiong Luo - Pioneering Patents and Collaborations

Introduction:

In the world of technological innovation, Zhijiong Luo has made remarkable contributions with his groundbreaking patents in the field of semiconductor devices. With an impressive portfolio of 180 patents under his belt, Zhijiong Luo has cemented his position as a renowned inventor. This article sheds light on his latest patents, career highlights, noteworthy collaborations, and celebrates his significant impact on the industry.

Latest Patents:

One of Zhijiong Luo's notable patents is the MOSFET and method for manufacturing the same. This patent introduces a MOSFET design that enables the adjustment of threshold voltage by modifying the doping type and concentration of the back gate. By employing a self-aligned second doped region of the back gate, the MOSFET offers enhanced performance and manufacturing efficiency.

Another remarkable patent by Zhijiong Luo is the dual channel memory technology. This patent describes a memory device that utilizes both a front channel and a back channel through a substrate underneath a dual gate structure. This innovative approach enables the storage of multiple bits in a single memory cell, enhancing data storage capacity and retrieval speed.

Career Highlights:

Zhijiong Luo began his illustrious career at the Institute of Microelectronics, Chinese Academy of Sciences, where he honed his skills as a semiconductor device expert. During his tenure, he contributed significantly towards advancements in semiconductor technologies.

Later, Zhijiong Luo joined the prestigious International Business Machines Corporation (IBM), renowned for its pioneering research and development in the tech industry. At IBM, he continued to innovate and collaborate on cutting-edge projects, making significant contributions to the field of semiconductor device design.

Collaborations:

Throughout his career, Zhijiong Luo has collaborated with esteemed professionals in the field. One of his notable collaborators is Huilong Zhu, who has shared his expertise and insights to further advance their research in semiconductor devices.

Additionally, Zhijiong Luo has worked closely with Haizhou Yin, another industry expert known for his contributions to semiconductor technologies. Together, they have pushed the boundaries of innovation and brought forth groundbreaking patents.

Conclusion:

Zhijiong Luo's remarkable journey as an inventor and innovator in the field of semiconductor devices stands as a testament to his expertise and passion for technological advancement. With an impressive patent portfolio and significant contributions to top-tier organizations like the Institute of Microelectronics and IBM, his impact on the industry is undeniable. Zhijiong Luo's inventive mindset and collaborations have paved the way for groundbreaking advancements in the semiconductor field, ensuring a brighter future for technological innovation.

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