The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Nov. 18, 2011
Applicants:

Huilong Zhu, Poughkeepsie, NY (US);

Haizhou Yin, Poughkeepsie, NY (US);

Zhijiong Luo, Poughkeepsie, NY (US);

Inventors:

Huilong Zhu, Poughkeepsie, NY (US);

Haizhou Yin, Poughkeepsie, NY (US);

Zhijiong Luo, Poughkeepsie, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01);
Abstract

The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer; a first fin being formed by patterning the semiconductor layer; and a second fin being formed by patterning the semiconductor layer, wherein: top sides of the first and second fins have the same height; bottom sides of the first and second fins adjoin the semiconductor layer; and the second fin is higher than the first fin. According to the present disclosure, a plurality of semiconductor devices with different dimensions can be integrated on the same wafer. As a result, manufacturing process can be shortened and manufacturing cost can be reduced. Furthermore, devices with different driving capabilities can be provided.


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